Products Cited in Publications Worldwide Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites

Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites

Vladimir Bruevich; Leila Kasaei; Sylvie Rangan; Hussein Hijazi; Zhenyuan Zhang; Thomas Emge; Eva Y. Andrei; Robert A. Bartynski; Leonard C. Feldman; Vitaly Podzorov

DOI: PMID:

Abstract

The first experimental realization of the intrinsic (not dominated by defects) charge conduction regime in lead-halide perovskite field-effect transistors (FETs) is reported. The advance is enabled by: i) a new vapor-phase epitaxy technique that results in large-area single-crystalline cesium lead bromide (CsPbBr3) films with excellent structural and surface properties, including atomically flat surface morphology, essentially free from defects and traps at the level relevant to device operation; ii) an extensive materials analysis of these films using a variety of thin-film and surface probes certifying the chemical and structural quality of the material; and iii) the fabrication of nearly ideal (trap-free) FETs with characteristics superior to any reported to date. These devices allow the investigation of the intrinsic FET and (gated) Hall-effect carrier mobilities as functions of temperature. The intrinsic mobility is found to increase on cooling from ≈30 cm2 V−1 s−1 at room temperature to ≈250 cm2 V−1 s−1 at 50 K, revealing a band transport limited by phonon scattering. Establishing the intrinsic (phonon-limited) mobility provides a solid test for theoretical descriptions of carrier transport in perovskites, reveals basic limits to the technology, and points to a path for future high-performance perovskite electronic devices.

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